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Best quality Development Boards - MMBT2222ALT1G NPN 600mA 40V 225mW SOT-23(SOT-23-3) Bipolar Transistors – BJT RoHS – Ronghua

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Best quality Development Boards - MMBT2222ALT1G NPN 600mA 40V 225mW SOT-23(SOT-23-3) Bipolar Transistors – BJT RoHS – Ronghua Detail:

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Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors – BJT
RoHS:  Details
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 75 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 0.6 A
Pd – Power Dissipation: 225 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: MMBT2222AL
Packaging: Cut Tape
Packaging: MouseReel
Packaging: Reel
Height: 0.94 mm
Length: 2.9 mm
Technology: Si
Width: 1.3 mm
Brand: ON Semiconductor
Continuous Collector Current: 0.6 A
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 0.001058 oz

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Best quality Development Boards - MMBT2222ALT1G NPN 600mA 40V 225mW SOT-23(SOT-23-3) Bipolar Transistors – BJT RoHS – Ronghua detail pictures

Best quality Development Boards - MMBT2222ALT1G NPN 600mA 40V 225mW SOT-23(SOT-23-3) Bipolar Transistors – BJT RoHS – Ronghua detail pictures

Best quality Development Boards - MMBT2222ALT1G NPN 600mA 40V 225mW SOT-23(SOT-23-3) Bipolar Transistors – BJT RoHS – Ronghua detail pictures

Best quality Development Boards - MMBT2222ALT1G NPN 600mA 40V 225mW SOT-23(SOT-23-3) Bipolar Transistors – BJT RoHS – Ronghua detail pictures


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    5 Stars By Annie from Cape Town - 2018.06.18 17:25
    Cooperate with you every time is very successful, very happy. Hope that we can have more cooperation!
    5 Stars By Jonathan from Australia - 2017.09.28 18:29
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